全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
VLSI Design  2014 

High-Efficient Circuits for Ternary Addition

DOI: 10.1155/2014/534587

Full-Text   Cite this paper   Add to My Lib

Abstract:

New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33?μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications. 1. Introduction On-chip interconnections have become a serious challenge as more and more modules are packed into a chip. They dissipate lots of energy, increase response time, and cause coupling effects by adding more capacitance, resistance, and inductance to a circuit [1]. Multiple-valued logic (MVL) is an alternative solution to interconnect complexity and growing power dissipated by wires [2]. It reduces the amount of wires inside and outside a chip dramatically as more complex designs require a large number of wires for connecting circuit components. In addition, MVL has the high potential for increasing computational speed, reducing switching activity, and implementing many arithmetic and logic functions in a single chip [2, 3]. Among many MVL systems, ternary logic (also known as three-valued logic) has soared in popularity due to its simplicity and efficiency [4, 5]. In spite of potential superiorities of ternary logic, binary is still the dominant logic for circuit design in the industry. One of the main reasons is the intrinsic behaviour of transistors. The on-off characteristic of a transistor makes it an ideal device to implement Boolean algebra. However, dualism does not correspond to real-world applications effectively. Another reason why ternary logic is not as popular as its binary counterpart is mainly because of the lack of sufficient practical, high-performance logic gates and computational components. To make ternary logic applicable in practice, efficient circuits must be developed before all else. Voltage-mode MVL circuits are based on multithreshold designs [6, 7]. Therefore, traditional metal-oxide-semiconductor field-effect transistor (MOSFET) is not entirely suitable candidate for MVL implementation due to the fact that MOS devices are inherently single-threshold [8]. Since the introduction

References

[1]  H. O. Ron, K. W. Mai, and A. Fellow, “The future of wires,” Proceedings of the IEEE, vol. 89, no. 4, pp. 490–504, 2001.
[2]  E. ?zer, R. Sendag, and D. Gregg, “Multiple-valued logic buses for reducing bus energy in low-power systems,” IEE Proceedings: Computers and Digital Techniques, vol. 153, no. 4, pp. 270–282, 2006.
[3]  E. Dubrova, “Multiple-valued logic in VLSI: challenges and opportunities,” in Proceedings of the NORCHIP '99 Conference, pp. 340–349, 1999.
[4]  B. Hayes, “Third base,” American Scientist, vol. 89, pp. 490–494, 2001.
[5]  S. L. Hurst, “Multiple-valued logic—its status and its future,” IEEE Transactions on Computers, vol. 33, no. 12, pp. 1160–1179, 1984.
[6]  Y.-B. Kim, “Integrated circuit design based on carbon nanotube field effect transistor,” Transactions on Electrical and Electronic Materials, vol. 12, no. 5, pp. 175–188, 2011.
[7]  Y. Yasuda, Y. Tokuda, S. Zaima, K. Pak, T. Nakamura, and A. Yoshida, “Realization of quaternary logic circuits by n-channel MOS devices,” IEEE Journal of Solid-State Circuits, vol. 21, no. 1, pp. 162–168, 1986.
[8]  H. Inokawa, A. Fujiwara, and Y. Takahashi, “A multiple-valued logic with merged single-electron and MOS transistors,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM '01), pp. 7.2.1–7.2.4, December 2001.
[9]  S. Lin, Y.-B. Kim, and F. Lombardi, “A novel CNTFET-based ternary logic gate design,” in Proceedings of the 52nd IEEE International Midwest Symposium on Circuits and Systems (MWSCAS '09), pp. 435–438, Cancun, Mexico, August 2009.
[10]  J. Appenzeller, “Carbon nanotubes for high-performance electronics: progress and prospect,” Proceedings of the IEEE, vol. 96, no. 2, pp. 201–211, 2008.
[11]  A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, “Theory of ballistic nanotransistors,” IEEE Transactions on Electron Devices, vol. 50, no. 9, pp. 1853–1864, 2003.
[12]  A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, “Logic circuits with carbon nanotube transistors,” Science, vol. 294, no. 5545, pp. 1317–1320, 2001.
[13]  V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, “Carbon nanotube inter- and intramolecular logic gates,” Nano Letters, vol. 1, no. 9, pp. 453–456, 2001.
[14]  M. M. Shulaker, G. Hills, N. Patil et al., “Carbon nanotube computer,” Nature, vol. 501, pp. 526–530, 2013.
[15]  A. P. Dhande and V. T. Ingole, “Design & implementation of 2-bit ternary ALU slice,” in Proceedings of the International Conference on IEEE Science of Electronics, Technology of Information and Telecommunication, pp. 17–21, 2005.
[16]  S. Lin, Y.-B. Kim, and F. Lombardi, “CNTFET-based design of ternary logic gates and arithmetic circuits,” IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 217–225, 2011.
[17]  M. H. Moaiyeri, A. Doostaregan, and K. Navi, “Design of energy-efficient and robust ternary circuits for nanotechnology,” IET Circuits, Devices and Systems, vol. 5, no. 4, pp. 285–296, 2011.
[18]  S. A. Ebrahimi, P. Keshavarzian, S. Sorouri, and M. Shahsavari, “Low power CNTFET-based ternary full adder cell for nanoelectronics,” International Journal of Soft Computing and Engineering, vol. 2, pp. 291–295, 2012.
[19]  P. Keshavarzian and R. Sarikhani, “A novel CNTFET-based ternary full adder,” Circuits, Systems, and Signal Processing, vol. 33, no. 3, pp. 665–679, 2014.
[20]  J. A. Mol, J. van der Heijden, J. Verduijn, M. Klein, F. Remacle, and S. Rogge, “Balanced ternary addition using a gated silicon nanowire,” Applied Physics Letters, vol. 99, no. 26, Article ID 263109, 2011.
[21]  A. Raychowdhury and K. Roy, “Carbon-nanotube-based voltage-mode multiple-valued logic design,” IEEE Transactions on Nanotechnology, vol. 4, no. 2, pp. 168–179, 2005.
[22]  M. H. Moaiyeri, R. F. Mirzaee, A. Doostaregan, K. Navi, and O. Hashemipour, “A universal method for designing low-power carbon nanotube FET-based multiple-valued logic circuits,” IET Computers and Digital Techniques, vol. 7, no. 4, pp. 167–181, 2013.
[23]  E. Trias, J. Navas, E. S. Ackley, S. Forrest, and M. Hermenegildo, Negative Ternary Set-Sharing, vol. 5366 of Lecture Notes in Computer Science, 2008.
[24]  M. H. Moaiyeri, R. F. Mirzaee, K. Navi, and A. Momeni, “Design and analysis of a high-performance CNFET-based Full Adder,” International Journal of Electronics, vol. 99, no. 1, pp. 113–130, 2012.
[25]  Z. K. Tang, L. Y. Zhang, N. Wang et al., “One-dimensional superconductivity in 0.4 nm single-walled carbon nanotubes,” Proceedings of the Electrochemical Society, pp. 587–595, 2002.
[26]  M. S. Dresselhaus, G. Dresselhaus, and P. Avouris, Carbon Nanotubes: Synthesis, Structure, Properties, and Applications, Springer, 2001.
[27]  J. Deng, Device modeling and circuit performance evaluation for nanoscale devices: silicon technology beyond 45nm node and carbon nanotube field effect transistors [Ph.D. thesis], Stanford University, 2007.
[28]  “Stanford University CNFET Model,” http://nano.stanford.edu/models.phpwebsite.
[29]  Y. B. Kim and Y.-B. Kim, “High speed and low power transceiver design with CNFET and CNT bundle interconnect,” in Proceeding of the 23rd IEEE International SOC Conference (SOCC '10), pp. 152–157, Las Vegas, Nev, USA, September 2010.
[30]  H. Shahidipour, A. Ahmadi, and K. Maharatna, “Effect of variability in SWCNT-based logic gates,” in Proceedings of the 12th International Symposium on Integrated Circuits (ISIC '09), pp. 252–255, December 2009.
[31]  S. Lin, Y.-B. Kim, and F. Lombardi, “Design and analysis of a 32?nm PVT tolerant CMOS SRAM cell for low leakage and high stability,” Integration, the VLSI Journal, vol. 43, no. 2, pp. 176–187, 2010.
[32]  K. El Shabrawy, K. Maharatna, D. Bagnall, and B. M. Al-Hashimi, “Modeling SWCNT bandgap and effective mass variation using a Monte Carlo approach,” IEEE Transactions on Nanotechnology, vol. 9, no. 2, pp. 184–193, 2010.
[33]  Predictive Technology Model, http://ptm.asu.edu.
[34]  C. García and A. Rubio, “Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario,” in Proceedings of the 14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS '11), pp. 249–254, April 2011.
[35]  F. Ali Usmani and M. Hasan, “Carbon nanotube field effect transistors for high performance analog applications: an optimum design approach,” Microelectronics Journal, vol. 41, no. 7, pp. 395–402, 2010.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133