This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2?dB/mW is expected and will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices, active antenna arrays, and base stations operating in small cells. 1. Introduction Long Term Evolution (LTE) is a next generation communication standard developed by 3rd Generation Partnership Project (3GPP) [1], allowing a high data rate transmission over radio interface. It represents a natural progression from voice transmission systems as GSM through UMTS (with increased spectral efficiency for data transmission) to data transmission scheme, where the majority of system throughput is used for high quality audiovisual streaming, internet access, file sharing, and gaming, with peak downlink bandwidths in excess of 100?Mbps [2]. Such a dramatic increase in data throughput corresponds to proportional increase in either a bandwidth (BW) or signal to noise ratio (SNR) or both at the same time. Both quantities cannot be made arbitrary high. SNR is a function of maximum transmitted power allowed for the system, distance to the receiver, and modulation scheme, and these parameters are usually optimised for the transmission. BW is controlled by the availability of a radio spectrum allocated for the system and, to certain extent, more bandwidth can be assigned to increase channel capacity if needed (providing that there is enough amount of unoccupied bandwidth left). Nowadays, the number of various wideband radio systems coexisting with LTE is significant and as a result, the radio spectrum has become relatively congested. For example, 3GPP specifies LTE frequency separation between frequency-division duplex (FDD) uplink and in the range of 45–400?MHz or even smaller distance (for time-division duplex (TDD) transmission bands) [1]. From a radio receiver perspective, in order to prevent unwanted signals from reaching processing stages, small frequency separation between bands imposes high selectivity (or
H. Holma and A. Toskala, LTE for UMTS: OFDMA and SC-FDMA Based Radio Access, Wiley, Chichester, UK, 2009.
[3]
P. Wambacq and W. Sansen, Distortion Analysis of Analog Integrated Circuits, Kluwer Academic Publisher, Boston, Mass, USA, 1998.
[4]
B. Razavi, RF Microelectronics, Prentice Hall, Englewood Cliffs, NJ, USA, 1998.
[5]
T. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, Cambridge, UK, 2004.
[6]
P. R. Gray, P. Hurst, S. Lewis, and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, Wiley, New York, NY, USA, 4th edition, 2001.
[7]
H. Zhang and E. Sánchez-Sinencio, “Linearization techniques for CMOS low noise amplifiers: a tutorial,” IEEE Transactions on Circuits and Systems I, vol. 58, no. 1, pp. 22–36, 2011.
[8]
Y. Ding and R. Harjani, “A +18?dBm IIP3 LNA in 0.35?μm CMOS,” in Proceedings of the IEEE International Solid-State Circuits Conference, pp. 162–443, February 2001.
[9]
E. Keehr and A. Hajimiri, “Equalization of IM3 products in wideband direct-conversion receivers,” in Proceedings of the IEEE International Solid State Circuits Conference (ISSCC'08), pp. 199–607, February 2008.
[10]
Y.-S. Youn, J.-H. Chang, K.-J. Koh, Y.-J. Lee, and H.-K. Yu, “A 2?GHz 16?dBm IIP3 low noise amplifier in 0.25?μm CMOS technology,” in Proceedings of the IEEE International Solid State Circuits Conference (ISSCC'03), pp. 439–507, February 2003.
[11]
H. M. Geddada, J. W. Park, and J. Silva-Martinez, “Robust derivative superposition method for linearising broadband LNAs,” Electronics Letters, vol. 45, no. 9, pp. 435–436, 2009.
[12]
T.-S. Kim and B.-S. Kim, “Post-linearization of cascode CMOS low noise amplifier using folded PMOS IMD sinker,” IEEE Microwave and Wireless Components Letters, vol. 16, no. 4, pp. 182–184, 2006.
[13]
S. Sesia, M. Baker, and I. Toufik, LTE, The UMTS Long Term Evolution: From Theory to Practice, Wiley, Chichester, UK, 2009.
[14]
C. W. Liu and M. Damgaard, “IP2 and IP3 nonlinearity specifications for 3G/WCDMA receivers,” High Frequency Electronics, pp. 16–29, June 2009.
F. Bruccoleri, E. A. M. Klumperink, and B. Nauta, “Wide-band CMOS low-noise amplifier exploiting thermal noise canceling,” IEEE Journal of Solid-State Circuits, vol. 39, no. 2, pp. 275–282, 2004.
[18]
C.-F. Liao and S.-I. Liu, “A broadband noise-canceling CMOS LNA for 3.1-10.6?GHz UWB receiver,” in Proceedings of the IEEE Conference on Custom Integrated Circuits, pp. 160–163, September 2005.
[19]
S. Chehrazi, A. Mirzaei, R. Bagheri, and A. A. Abidi, “A 6.5?GHz wideband CMOS low noise amplifier for multi-band use,” in Proceedings of the IEEE Conference on Custom Integrated Circuits, pp. 796–799, September 2005.
[20]
R. Gharpurey, “A broadband low-noise front-end amplifier for Ultra Wideband in 0.13-μm CMOS,” IEEE Journal of Solid-State Circuits, vol. 40, no. 9, pp. 1983–1986, 2005.
[21]
S. B. T. Wang, A. M. Niknejad, and R. W. Brodersen, “A sub-mW 960-MHz ultra-wideband CMOS LNA,” in Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium (RFIC'05), pp. 35–38, June 2005.
[22]
T. W. Kim and B. Kim, “A 13-dB IIP3 improved low-power CMOS RF programmable gain amplifier using differential circuit transconductance linearization for various terrestrial mobile D-TV applications,” IEEE Journal of Solid-State Circuits, vol. 41, no. 4, pp. 945–953, 2006.
[23]
J.-H. C. Zhan and S. S. Taylor, “A 5?GHz resistive-feedback CMOS LNA for low-cost multi-standard applications,” in Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC'06), pp. 191–200, February 2006.
[24]
B. G. Perumana, J.-H. C. Zhan, S. S. Taylor, and J. Laskar, “A 0.5-6?GHz improved linearity, resistive feedback 90-nm CMOS LNA,” in Proceedings of the IEEE Asian Solid-State Circuits Conference (ASSCC'06), pp. 263–266, November 2006.
[25]
R. Bagheri, A. Mirzaei, S. Chehrazi et al., “An 800-MHz-6-GHz software-defined wireless receiver in 90-nm CMOS,” IEEE Journal of Solid-State Circuits, vol. 41, no. 12, pp. 2860–2875, 2006.
[26]
M. Vidojkovic, M. Sanduleanu, J. Van Der Tang, P. Baltus, and A. Van Roermund, “A 1.2?V, inductorless, broadband LNA in 90 nm CMOS LP,” in Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium (RFIC'07), pp. 53–56, June 2007.
[27]
W.-H. Chen, G. Liu, B. Zdravko, and A. M. Niknejad, “A highly linear broadband CMOS LNA employing noise and distortion cancellation,” in Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium (RFIC'07), pp. 61–64, June 2007.
[28]
M. T. Reiha and J. R. Long, “A 1.2 v reactive-feedback 3.1-10.6?GHz low-noise amplifier in 0.13?μm CMOS,” IEEE Journal of Solid-State Circuits, vol. 42, no. 5, pp. 1023–1032, 2007.
[29]
R. Ramzan, S. Andersson, J. Dabrowski, and C. Svensson, “A 1.4?V 25?mW inductorless wideband LNA in 0.13?μm CMOS,” in Proceedings of the 54th IEEE International Solid-State Circuits Conference (ISSCC'07), pp. 417–613, February 2007.
[30]
J. Borremans, P. Wambacq, and D. Linten, “An ESD-protected DC-to-6GHz 9.7?mW LNA in 90nm digital CMOS,” in Proceedings of the 54th IEEE International Solid-State Circuits Conference (ISSCC'07), pp. 417–613, February 2007.
[31]
S. C. Blaakmeer, E. A. M. Klumperink, B. Nauta, and D. M. W. Leenaerts, “An inductorless wideband balun-LNA in 65?nm CMOS with balanced output,” in Proceedings of the 33rd European Solid-State Circuits Conference (ESSCIRC'07), pp. 364–367, September 2007.
[32]
S.-S. Song, D.-G. Im, H.-T. Kim, and K. Lee, “A highly linear wideband CMOS low-noise amplifier based on current amplification for digital TV tuner applications,” IEEE Microwave and Wireless Components Letters, vol. 18, no. 2, pp. 118–120, 2008.
[33]
J. Borremans, P. Wambacq, C. Soens, Y. Rolain, and M. Kuijk, “Low-area active-feedback low-noise amplifier design in scaled digital CMOS,” IEEE Journal of Solid-State Circuits, vol. 43, no. 11, pp. 2422–2433, 2008.
[34]
T. Chang, J. Chen, L. Rigge, and J. Lin, “A packaged and ESD-protected inductorless 0.1-8?GHz wideband CMOS LNA,” IEEE Microwave and Wireless Components Letters, vol. 18, no. 6, pp. 416–418, 2008.
[35]
S. Woo, W. Kim, C.-H. Lee, K. Lim, and J. Laskar, “A 3.6?mW differential common-gate CMOS LNA with positive-negative feedback,” in Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC'09), pp. 218–219, February 2009.
[36]
M. El-Nozahi, E. Sanchez-Sinencio, and K. Entesari, “A CMOS low-noise amplifier with reconfigurable input matching network,” IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 5, pp. 1054–1062, 2009.
[37]
D. Im, I. Nam, H.-T. Kim, and K. Lee, “A wideband CMOS Low noise amplifier employing noise and IM2 distortion cancellation for a digital TV tuner,” IEEE Journal of Solid-State Circuits, vol. 44, no. 3, pp. 686–698, 2009.
[38]
W.-H. Chen, Designs of broadband highly linear CMOS LNAs for multiradio multimode applications [Ph.D. thesis], University of California, Berkley, Calif, USA, 2010.
[39]
S. K. Hampel, O. Schmitz, M. Tiebout, and I. Rolfes, “Inductorless 1-10.5 GHz wideband LNA for multistandard applications,” in Proceedings of the IEEE Asian Solid-State Circuits Conference (A-SSCC'09), pp. 269–272, November 2009.
[40]
J. Kim, S. Hoyos, and J. Silva-Martinez, “Wideband common-gate CMOS LNA employing dual negative feedback with simultaneous noise, gain, and bandwidth optimization,” IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 9, pp. 2340–2351, 2010.
[41]
D. Im, I. Nam, J.-Y. Choi, B.-K. Kim, and K. Lee, “A CMOS active feedback wideband single-to-differential LNA using inductive shunt-peaking for saw-less SDR receivers,” in Proceedings of the 6th IEEE Asian Solid-State Circuits Conference (A-SSCC'10), pp. 153–156, November 2010.
[42]
H. Wang, L. Zhang, and Z. Yu, “A wideband inductorless LNA with local feedback and noise cancelling for low-power low-voltage applications,” IEEE Transactions on Circuits and Systems I, vol. 57, no. 8, pp. 1993–2005, 2010.
[43]
D. Im, I. Nam, and K. Lee, “A CMOS active feedback balun-LNA with high IIP2 for wideband digital TV receivers,” IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 12, pp. 3566–3579, 2010.
[44]
P.-I. Mak and R. P. Martins, “A 2 × VDD-enabled mobile-TV RF front-end with TV-GSM interoperability in 1-V 90-nm CMOS,” IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 7, pp. 1664–1676, 2010.
[45]
Y.-H. Yu, Y.-S. Yang, and Y.-J. E. Chen, “A compact wideband CMOS low noise amplifier with gain flatness enhancement,” IEEE Journal of Solid-State Circuits, vol. 45, no. 3, pp. 502–509, 2010.
[46]
M. El-Nozahi, A. A. Helmy, E. Sánchez-Sinencio, and K. Entesari, “An inductor-less noise-cancelling broadband low noise amplifier with composite transistor pair in 90?nm CMOS technology,” IEEE Journal of Solid-State Circuits, vol. 46, no. 5, pp. 1111–1122, 2011.
[47]
E. A. Sobhy, A. A. Helmy, S. Hoyos, K. Entesari, and E. Sanchez-Sinencio, “A 2.8-mW Sub-2-dB noise-figure inductorless wideband CMOS LNA employing multiple feedback,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 12, pp. 3154–3161, 2011.
[48]
M. Moezzi and M. S. Bakhtiar, “Wideband LNA using active inductor with multiple feed-forward noise reduction paths,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 4, pp. 1069–1078, 2012.
[49]
J. W. Park and B. Razavi, “A harmonic-rejecting CMOS LNA for broadband radios,” IEEE Journal of Solid-State Circuits, vol. 48, no. 4, pp. 1072–1084, 2013.