Carbon nanotubes (CNTs), contacted by electrodeposited Pd0.59Ni0.41 alloys, are characterised using electrical measurements and Raman spectroscopy. The high workfunctions of Nickel and Palladium form an ohmic contact with the CNT valence band, but the contact properties change on Hydrogen exposure due to a reduction in the PdNi workfunction and the realignment of the PdNi Fermi level with the CNT band structure. A PdNi contacted semiconducting CNT exhibited significantly lower currents after Hydrogen exposure while a metallic CNT exhibited a small current increase. The semiconducting and metallic natures of the CNTs are confirmed by their Raman spectra. This study demonstrates a technique for modulating the PdNi-CNT contact and differentiating between semiconducting and metallic CNTs via contact modulation. It also provides experimental evidence of the theoretical allocation of features in the CNT Raman spectra. 1. Introduction Carbon nanotubes (CNTs), along with other carbon allotropes such as Graphene and Fullerenes, have sparked great interest in a multitude of research fields owing to their low dimensionality [1] and excellent electrical, mechanical, and thermal properties as well as high surface area to volume ratio [2]. The occurrence of metallic and semiconducting CNTs and demonstration of ballistic electron transport [3] have led to intense research into their use to further miniaturise electronic transistors, leading to all-Carbon circuits [4]. The ballistic electron transport also makes them an attractive material for spintronic devices [5], where electron spin is conserved by the absence of collision events. The high electronic conductivity and almost complete optical transparency of Graphene have led researchers to investigate its use as a transparent electrode [6] to replace the expensive Indium Tin Oxide (ITO). Innovative uses stemming from filling of hollow CNTs for use as battery anodes [7] and formation of high mechanical strength aerogels from Graphene [8] reveal the wide variety of applications possible with these versatile forms of Carbon. Despite this promise, significant problems in production, positioning, and differentiation between metallic and semiconducting CNTs remain before individual CNT-based electronic devices become commercially viable. Studies that investigated the performance of transistors based on individual CNTs have found that the metal-CNT contacts play an important role in the device behaviour [9, 10]. The importance of metal-CNT contacts is further highlighted by Zhang et al. [11], who demonstrated a doping-free
References
[1]
M. R. Buitelaar, A. Bachtold, T. Nussbaumer, M. Iqbal, and C. Schonenberger, “Multiwall carbon nanotubes as quantum dots,” Physical Review Letters, vol. 88, Article ID 156801, 2002.
[2]
R. Hu, B. A. Cola, N. Haram et al., “Harvesting waste thermal energy using a carbon-nanotube-based thermo-electrochemical cell,” Nano letters, vol. 10, no. 3, pp. 838–846, 2010.
[3]
A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, “Ballistic carbon nanotube field-effect transistors,” Nature, vol. 424, no. 6949, pp. 654–657, 2003.
[4]
X. Liang, S. Wang, X. Wei et al., “Towards entire-carbon-nanotube circuits: the fabrication of single-walled-carbon-nanotube field-effect transistors with local multiwalled-carbon-nanotube interconnects,” Advanced Materials, vol. 21, no. 13, pp. 1339–1343, 2009.
[5]
A. Cottet, T. Kontos, S. Sahoo et al., “Nanospintronics with carbon nanotubes,” Semiconductor Science and Technology, vol. 21, no. 11, article S11, pp. S78–S95, 2006.
[6]
J. O. Hwang, J. S. Park, D. S. Choi et al., “N-doped reduced graphene transparent electrodes for high-performance polymer light-emitting diodes,” ACS Nano, vol. 6, no. 1, pp. 159–167, 2012.
[7]
H. Zhang, H. Song, X. Chen, J. Zhou, and H. Zhang, “Preparation and electrochemical performance of SnO2@carbon nanotube core-shell structure composites as anode material for lithium-ion batteries,” Electrochimica Acta, vol. 59, pp. 160–167, 2012.
[8]
M. Mecklenburg, A. Schuchardt, Y. K. Mishra et al., “Aerographite: ultra lightweight, flexible nanowall, carbon microtube material with outstanding mechanical performance,” Advanced Materials, vol. 24, pp. 3486–3490, 2012.
[9]
P. Avouris, “Molecular electronics with carbon nanotubes,” Accounts of Chemical Research, vol. 35, no. 12, pp. 1026–1034, 2002.
[10]
Z. Chen, J. Appenzeller, J. Knoch, Y. m. Lin, and P. Avouris, “The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors,” Nano Letters, vol. 5, no. 7, pp. 1497–1502, 2005.
[11]
Z. Zhang, X. Liang, S. Wang et al., “Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits,” Nano Letters, vol. 7, no. 12, pp. 3603–3607, 2007.
[12]
M. S. Dresselhaus, A. Jorio, A. G. Souza Filho, G. Dresselhaus, and R. Saito, “Raman spectroscopy on one isolated carbon nanotube,” Physica B: Condensed Matter, vol. 323, no. 1–4, pp. 15–20, 2002.
[13]
F. Souza, A. Jorio, G. Dresselhaus et al., “Effect of quantized electronic states on the dispersive Raman features in individual single-wall carbon nanotubes,” Physical Review B—Condensed Matter and Materials Physics, vol. 65, no. 3, Article ID 035404, pp. 354041–354046, 2002.
[14]
R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and P. Avouris, “Single- and multi-wall carbon nanotube field-effect transistors,” Applied Physics Letters, vol. 73, no. 17, pp. 2447–2449, 1998.
[15]
M. S. Dresselhaus, G. Dresselhaus, R. Saito, and A. Jorio, “Raman spectroscopy of carbon nanotubes,” Physics Reports, vol. 409, no. 2, pp. 47–99, 2005.
[16]
A. R. Usgaocar and C. H. de Groot, “Electrodeposited PdNi as possible ferromagnetic contacts for carbon nanotubes,” Physica Status Solidi B: Basic Research, vol. 247, no. 4, pp. 888–891, 2010.
[17]
D. Mann, A. Javey, J. Kong, Q. Wang, and H. Dai, “Ballistic transport in metallic nanotubes with reliable pd ohmic contacts,” Nano Letters, vol. 3, no. 11, pp. 1541–1544, 2003.
[18]
C. Weichsel, O. Pagni, and A. W. R. Leitch, “Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs,” Semiconductor Science and Technology, vol. 20, no. 8, pp. 840–843, 2005.
[19]
T.-H. Chou, Y.-K. Fang, Y.-T. Chiang, C.-I. Lin, and K.-C. Lin, “Improving hydrogen detecting performance of a Pd/n-LTPS/glass thin film Schottky diode with a TiO2 interface layer,” Sensors and Actuators B: Chemical, vol. 134, no. 2, pp. 539–544, 2008.
[20]
V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, “Controlling doping and carrier injection in carbon nanotube transistors,” Applied Physics Letters, vol. 80, no. 15, pp. 2773–2775, 2002.
[21]
E. H. Rhoderick, “metal-semiconductor contacts,” IEE Proceedings I: Solid State and Electron Devices, vol. 129, no. 1, pp. 1–14, 1982.