The focus of this paper is to analyze in detail the nonlinear polarization rotation phenomenon in the Semiconductor Optical Amplifier (SOA) according to the injection conditions. To this end, we have developed a numerical model based on the coupled mode theory and the formalism of Stokes. The obtained results are in agreement with the experimental measurements that have been carried out in free space, which allows optimum control and preservation of the polarization state of the injected and collected signals. 1. Introduction Semiconductor optical amplifiers (SOAs) are key enablers for optical networks. They are considered among the most promising technologies for the next generation of optical networks. They can have a significant impact on the architecture and shape the economics of future optical networks due to their attractive features, such as the compact size, the high potential of monolithically integration, and the multifunctionality combined with strong nonlinearities. They have huge potential for use in wavelength division multiplexing (WDM) and access, metropolitan, and core networks. We can achieve various optoelectronic functions for all-optical communication systems, by exploiting nonlinear effects taking place within the SOA, such as cross-gain modulation (XGM), cross-phase modulation (XPM), four-wave mixing (FWM), and cross-polarization modulation (XPolM). Therefore, SOAs can provide integrated functionality of internal switching and routing functions that are required for a feature-rich network. Space switches, wavelength converters, and wavelength selectors, which are made from SOAs, can lead to large cost reductions and improved performance in future optical network equipment. SOAs are naturally polarization sensitive in terms of gain and effective refractive indices. The difference between the confinement factor of the transverse electric (TE) mode and that of the transverse magnetic (TM) mode results in an optical anisotropy and birefringence [1]. When two signals are injected in the SOA, an additional birefringence and gain compression affects the SOA. The two signals affect one another by producing different phase and gain compression on the TE and TM components. Consequently, this results in a rotation of the polarization state for each signal. The SOA bias current and the input signal power are the parameters that determine the magnitude of the polarization rotation. In order to analyze the polarization rotation phenomenon in detail and to predict the SOA operational characteristics, mathematical models are required. Many
References
[1]
L. Q. Guo and M. J. Connelly, “Signal-induced birefringence and dichroism in a tensile-strained bulk semiconductor optical amplifier and its application to wavelength conversion,” Journal of Lightwave Technology, vol. 23, no. 12, pp. 4037–4045, 2005.
[2]
G. Toptchiyski, S. Kindt, K. Petermann, E. Hilliger, S. Diez, and H. G. Weber, “Time-domain modeling of semiconductor optical amplifiers for OTDM applications,” Journal of Lightwave Technology, vol. 17, no. 12, pp. 2577–2583, 1999.
[3]
N. K. Das, Y. Yamayoshi, and H. Kawaguchi, “Analysis of basic four-wave mixing characteristics in a semiconductor optical amplifier by the finite-difference beam propagation method,” IEEE Journal of Quantum Electronics, vol. 36, no. 10, pp. 1184–1192, 2000.
[4]
R. Gutiérrez-Castrejón, L. Schares, L. Occhi, and G. Guekos, “Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length,” IEEE Journal of Quantum Electronics, vol. 36, no. 12, pp. 1476–1484, 2000.
[5]
M. J. Connelly, “Wideband semiconductor optical amplifier steady-state numerical model,” IEEE Journal of Quantum Electronics, vol. 37, no. 3, pp. 439–447, 2001.
[6]
L. Occhi, L. Schares, and G. Guekos, “Phase Modeling Based on the α-Factor in Bulk Semiconductor Optical Amplifiers,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 9, no. 3, pp. 788–797, 2003.
[7]
R. G. Castrejón and M. Duelk, “Uni-directional time-domain bulk SOA simulator considering carrier depletion by amplified spontaneous emission,” IEEE Journal of Quantum Electronics, vol. 42, no. 6, pp. 581–588, 2006.
[8]
W. Mathlouthi, P. Lemieux, M. Salsi, A. Vannucci, A. Bononi, and L. A. Rusch, “Fast and efficient dynamic WDM semiconductor optical amplifier model,” Journal of Lightwave Technology, vol. 24, no. 11, pp. 4353–4365, 2006.
[9]
H. Soto, D. Erasme, and G. Guekos, “5-Gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers,” IEEE Photonics Technology Letters, vol. 13, no. 4, pp. 335–337, 2001.
[10]
H. Soto, E. álvarez, C. A. Díaz et al., “Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier,” Optics Communications, vol. 237, no. 1-3, pp. 121–131, 2004.
[11]
J. Yang, L. Han, H. Zhang, and Y. Guo, “Function-lock strategy in OR/NOR optical logic gates based on cross-polarization modulation effect in semiconductor optical amplifier,” Chinese Optics Letters, vol. 5, no. 10, pp. 566–568, 2007.
[12]
H. Soto, C. A. Díaz, J. D. Topomondzo, D. Erasme, L. Schares, and G. Guekos, “All-optical AND gate implementation using cross-polarization modulation in a semiconductor optical amplifier,” IEEE Photonics Technology Letters, vol. 14, no. 4, pp. 498–500, 2002.
[13]
H. Soto and A. Gutiérrez, “All-optical 2-to-4 level encoder based on cross polarization modulation in a semiconductor optical amplifier utilized to develop an all-optical 2 input digital multiplexer,” Optics Express, vol. 14, no. 20, pp. 9000–9005, 2006.
[14]
Y. Liu, M. T. Hill, E. Tangdiongga et al., “Wavelength conversion using nonlinear polarization rotation in a single semiconductor optical amplifier,” IEEE Photonics Technology Letters, vol. 15, no. 1, pp. 90–92, 2003.
[15]
Y. Dong, Z. Li, C. Lu, Y. Wang, and T. H. Cheng, “3R all-optical regeneration and wavelength conversion based on cross polarization modulation effect from a single semiconductor optical amplifier,” in >Proceedings of the IEEE 13th Annual Meeting Lasers and Electro-Optics Society 2000 Annual Meeting (LEOS '00), vol. 1, pp. 403–404, October 2003.
[16]
H. Soto, J. C. Dominguez, D. Erasme, and G. Guekos, “Demonstration of an all-optical switch using cross-polarization modulation in semiconductor optical amplifiers,” Microwave and Optical Technology Letters, vol. 29, no. 3, pp. 205–208, 2001.
[17]
M. Gustavsson, “Analysis of polarization independent optical amplifiers and filters based on polarization rotation in periodically asymmetric waveguides,” IEEE Journal of Quantum Electronics, vol. 29, no. 4, pp. 1168–1178, 1993.