Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices

Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.