Fabrication and Characterization of High-Q Nano-Inductor for Power Electronics

This paper presents a high-Q MWCNT (Multi Wall Carbon Nano-Tube) network based pulse-shaped on-chip embedded nano-inductor for power electronic circuits. This high-Q inductor is fabricated using a composite of MWCNT (multi Wall Carbon Nano Tube) network and Fe in semiconductor processing environment. A layer of nano composite film (Cu/CoFe2o4) is patterned as an introduction layer of the nano-inductor. The performance of the fabricated nano-inductor is compared with and without the nano composite film. An inductance of 6.25 nH, with a quality factor of 186 at 2.4 GHz is measured from the MWCNT network inductor (with nano composite film). The maximum inductance of the nano inductor is about 6.6 nH, and the maximum Q factor is about 440. However the inductance value and the quality factor is improved that of conventional micro scale inductors, the chip area of the inductor is reduced only 25%.