Effect of Annealing Treatments on Scintillation Properties of Lu2Si2O7 e Grown by Czochralski Method

Although the Lu2Si2O7 e(LPS e) has a high light yield about 26000ph/MeV, the LPS e crystals grown by Czochralski(Cz) process usually display a low light yield. In present work, annealing treatments in different conditions were carried out on Cz grown LPS e with low luminescence efficiency, in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS e, such as luminescence efficiency, absorption spectrum. It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS e; annealing in air can dramatically improve the luminescence efficiency of LPS e. The optimized annealing mechanism is determined through the comparison between different annealing treatment: atmosphere of air; annealing temperature of 1400 习annealing time depending on the dimension of the sample. The larger dimension is the longer annealing time. The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS e crystal are also discussed.