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Research of Oxidation Resistance of Short Carbon Fiber Reinforced SiC Composite by Hota2pressing

DOI: 10.3724/sp.j.1077.2009.00305

Keywords: Csf/SiC composite , isothermal oxidation , resistance oxidation property

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Abstract:

Short carbon fiber reinforced SiC (Csf/SiC) composite was prepared by hota2pressing method. XRD, SEM and isothermal oxidation test were used to study the isothermal oxidation property of Csf/SiC composite. The results show that the oxidation weight loss of the composite is the most at 900 The weight loss decreases with the oxidation temperatures rising. Below 900 the oxidation weight loss of the composites is caused by the carbon fibers oxidation. Above 1450 the composites gain weight. Between 900-1450 short carbon fibers on the composite surface are oxidized and the SiC matrix forms a protecting film. The inner short carbon fibers still have the strengthen effect for the oxidation layer and matrix protecting them from oxidation, and the composites have good self-resistance oxidation property. When the composites oxide at 1600 the composite surface is destroyed badly and lose the resistance oxidation capacity.

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