Microstructure and Electrical Properties of PMN―PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition

Lead magnesium niobate―lead titanate (PMN―PT) ferroelectric thin films with composition near the morphotropic phase boundary (MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD). Highly (001)―oriented PMN―PT thin films with lower oxygen defect and higher crystalline property were obtained. The results show that the microstructure and electrical properties of PMN―PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process. With the use of oxygen plasma, the dielectric constant of the PMN―PT thin film is increased from 1484 to 3012, the remnant polarization (2Pr) changes from 18 μC/cm2 to 38 μC/cm2.