High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition

TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by Xray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.