Characterization and Growth Mechanism of Wirelike and Beltlike | Si3N4 Quasi-one-dimension Structures

Large quantities of wirelike and beltlike | Si3N4 quasi-one-dimension structure were synthesized via direct reaction of SiO powder with N2 at 1450 sing chemical vapor deposition. The wirelike | Si3N4 was deposited at lower temperature region (1200 while the beltlike a | Si3N4 was deposited at higher temperature region (1450 The mean diameter and length of wirelike a | Si3N4 are about 100-300 nm and tens of micrometers, respectively. And the beltlike | Si3N4 is tens of nanometers in the thickness, 300nm-2| in the width and several micrometers to tens of micrometers in the length. HRTEM image and SAED pattern of the wirelike and beltlike a | Si3N4 show that they are single crystalline, and beltlike | Si3N4 grows along ￡ 10￡ direction. Wirelike and beltlike | Si3N4 quasi-one-dimension structure grow by the VS process. Results show that high deposition temperature and supersaturation favors the formation of beltlike quasi-one-dimension structures; while low deposition temperature and supersaturation tend to form wirelike quasi-one-dimension structures. Therefore, the morphology of microstructure materials could be controlled through regulating the deposition temperature and supersaturation in the chemical vapor deposition process. The experiment may offer reference for controlled synthesis preparation of quasi-one-dimension structures. a¤