Investigation of Structural and Physical Properties of Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO Capacitors Fabricated on Glass Substrate

Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by solgel method. The structural and physical properties of Pt/PZT/ITO capacitors were investigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by Xray diffraction (XRD), ferroelectric tester, UVspectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor, measured at 5V, possesses good ferroelectric properties, such as fatiguefree characteristics, retention characteristics, large remnant polarization (41.7μC/cm2 ) and high resistivity (2.5×109Ω·cm). The analysis of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmiclike behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stronger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.