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Influence of Properties of Bi2(Zn1/3Nb2/3)2O7 Ceramics Doped with Na-Ni

DOI: 10.3724/sp.j.1077.2010.00825

Keywords: Bi2(Zn1/3Nb2/3)2O7 based ceramic, dielectric relaxation, ion substitution, distortion of crystal lattice, defect dipole

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Abstract:

Bi2(Zn1/3Nb2/3)2O7 based ceramics were prepared by a traditional solid phase reaction method. The effects of substitution Na+ for Bi3+ and Ni2+ for Nb3+ on the sintering and dielectric properties of Bi2(Zn1/3Nb2/3)2O7 based ceramics were investigated. The sintering temperature of the substituted samples dropped to 870 rom 960 At -30 130 the dielectric relaxation peak with a broad temperature region is obviously observed and two relaxation peaks appear when the substitution of Ni2+ reaches 0.2. Then, with the increasing of substitution, the temperature of the permittivity maximum shifts to higher temperature and the activation energy involved in the relaxation processes increases and the distance between two relaxation peaks become longer. Defect dipole and distortion of crystal lattice theories are used to explain the dielectric relaxation of Na-Ni doped Bi2(Zn1/3Nb2/3)2O7 ceramics.

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