InGaAs/GaAs HEMT for High Frequency Applications

In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep source-drain implants are proposed for the design. The device simulations have demonstrated its utility towards high frequency applications in GHz range.