Investigation of Changes in the Topography of TixOy Thin Layers under Heat Process

Ti films of the same thickness and near normal deposition angle and the same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Due to getting properties of Titanium atoms, they specially react with oxygen during evaporation and TixOy layers produced. Different annealing temperatures as 130 and 330 Celsius degree with uniform 9 cm3 sec-1 oxygen flow, were used for producing titanium di oxide layers. Their nano structures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The getting property of Ti and annealing temperature, can play an important role on the nano-structure of the films.