Fotoluminescência de nanocristais de Si produzidos por implanta o i nica a quente: efeito da passiva o em hidrogênio.

The intense research activity on Si nanostructures in the last decades has been motivating by their promising applications in optoelectronics and photonic devices. In this contribution we study the photoluminescence (PL) from Si nanocrystals (Si NCs) produced by hot implantation, after a post-annealing step in a forming gas ambient (passivation process). When measured at low pump power (~20 mW/cm2) our samples present two photoluminescence (PL) bands (at 780 and 1000 nm, respectively). Since each PL band was shown to have different origin we have investigated the passivation effect on them. We have found that only the 1000 nm PL band is strongly influenced by the passivation process in its intensity. In addition we have studied samples implanted at 600 oC annealed at 1150 oC for different time intervals and further passivated. The results show that the passivation effect on the 1000 nm PL band is strongly dependent on the preannealing time.