A proposed OEIC circuit with two metal layer silicon waveguide and low power photonic receiver circuit

Recent development in the field of optical communication have increased the need for Opto Electronic Integrated circuit used for the high speed data transmission with low power consuming, high bandwidth and compact size. Presented is the OEIC chip with two metal layer waveguide and low power receiver circuit using standard CMOS technology. The silicon dioxide waveguide is composed of two metal layer reducing metal layer make OEIC cost effective , The silicon LED is fabricated using nwell/p-substrate with p+ octagonal rings, the p+/nwell forms the series pn junction to increase the light emitting area which operates in reverse bias mode. Photo detector is made of multiple PN junction to increase the depletion region width with n+ active implantation/n-well fabricated on the p substrate .the photocurrent receiver circuit is made of MOSFET to perform the function of photo detection and preamplification