RESEARCH CHALLENGES AND MATERIAL FOR FUTURISTIC CMOS DEVICES

Now a days Engineers are involved withproblems ahead below 100nm gate length MOStransistor technology. The downsizing of the MOSdevices results to smaller area, smaller powerconsumption and improvements in performance ofdevice and circuits. The further scaling down ofComplementary Metal Oxide Semiconductor (CMOS)transistors requires replacement of conventional silicondioxide layer with higher dielectric constant (K)material for gate dielectric. In order to reduce the gateleakage current, and also to maximize gate capacitance,‘high K’ gate oxide materials such as Al2O3, ZrO2, HfO2,Ta2O5, TiO2, Gd2O3, are under investigation. In thispaper titanium dioxide (TiO2) is chosen as an alternateto silicon dioxide (SiO2).Here thin film of TiO2has beengrown practically and characterized. The samplesdeposited by sol gel spin coating method werecharacterized using X-Ray Diffractometer and thicknesswas measured using Scanning Electron Microscope(SEM). The grain size was found to be several tens ofnanometer.