Study of Influence of Channel Length Variation in Nano Range on Power and Delay of 3T DRAM Cell

This paper describes the design issues of DRAM, simulation of 3T DRAM cell, and measurement of its power and delay, for various channel length. Varying the parameters such as channel length, we observe different results being reflected in its power and delay which is described in this paper. Waveforms are plotted as per our observations.