Study on Nano Silicon Oxide Growth in Argon Media

When an ultra thin Silicon oxide film will been grown thermally on Si substrate, the clean oxide film could not be grown because of native oxide on the substrate and impurities such as carbon. Therefore some methods and experiments have been performed for grow ing SiO2 on Si (111) in presence and in absence of Ar gas at high pressure and high temperature. Experiments show that clean and amorphous nano oxide film could be formed at Ar media. Moreover, the film structures have been studied by using AES (Auger Electron Spectroscopy) and SEM (Scanning Electron Microscopy) techniques.