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AIP Advances 2012
Metastable ultrathin crystal in thermally grown SiO2 film on Si substrateDOI: 10.1063/1.4768269 Abstract: A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.
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