全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
AIP Advances  2012 

Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate

DOI: 10.1063/1.4768269

Full-Text   Cite this paper   Add to My Lib

Abstract:

A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133