Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects.