STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k) as a function of temperature and frequency. Percent theoretical density (%TD) above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8μm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.