Degeneracy Effect on Carrier transport in Bilayer Graphene Nanoribbon

In order to develop the new device characteristic such as graphene nanoribbon , carbon nanotube field effect transistor (CNTFET) and naonowire, it is essential to investigate the effect of quantum limit in nanoscale regime. The effect of quantum confinement on carrier drift velocity as an important parameter in a symmetrical distribution is in our focus. In this paper carrier velocity in degeneracy limit for bilayer graphene nanoribbon (BGN) is explored. Based on the presented model it is notable that for normalized Fermi energy more than zero, degenerate approximations can be applied in addition in this limit similar to the normal FET the carrier velocity can be approximated by Fermi velocity. Finally, this analytical model proves that the carrier velocity of BGN increases with the temperature in non-degenerate regime so that we can write in the non-degenerate limit the maximum of carrier velocity in the form of thermal velocity.