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Monte Carlo Simulation of Single Electronics Based on Orthodox Theory

DOI: 10.11591/ij-nano.v1i2.1518

Keywords: Single electron devices , Monte Carlo simulation , Quantum tunneling , Orthodox theory , MUSES

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Abstract:

In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation process is based on orthodox theory. Single electron box, single electron transistor, electron pump and inverter circuits have been investigated, and the results are compared with the previous relevant literature

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