Investigation of Optical Properties of Si-Nc Er-Doped Fiber Amplifier with the Gaussian Radius Distribution of Nc

Optical and electrical properties of Er-doped Sinanocrystal (Si-NC) fiber amplifier are studied. Presence of Si-NC near Er ions in silica matrix induces strong coupling mechanism and improves the efficiency of Er excitation but in this process the size of Si-NC is important. We investigate effect of radius variation of Si-NC in the range of 2-6nm by studying the steady state and time resolved luminescence signals at 1.54 μm. We conclude that by limiting the range of Si-NC sizes the amplifier gain is improved. On the other hand Si-NCs may introduce optical loss mechanism, such as confined carrier absorption loss that affects the possibility of obtaining positive net gain. But this detrimental event can be affected by change in the radius of Si-NC as reported in this article.