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Sensors  2010 

Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures

DOI: 10.3390/s101110155

Keywords: lateral phtotvoltaic effect (LPE), metal-semiconductor (MS), metal-oxide-semiconductor (MOS)

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Abstract:

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

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