HE TEMPERATURE DISTRIBUTION IN A SUBSTRATE RADIATIVELY HEATED IN VACUUM
真空辐射加热基片的温度分布

How to reach a uniformly distributed temperature in a substrate radiatively heated in vacuum is one of the major issues in the thin film deposition. In this article, numerical calculations and infrared colorimetric measurements of temperature are made to analyze a radiation heater used in vacuum, named as IMCAS-VRH. IMCAS-VRH is used to heat a monocrystal silicon substrate with a diameter of 6 inches, under an electric power of 3 860 W. The mean temperature over the substrate is 1093 K, while the whole temperature variation is within 6K. The calculated temperature distributions agree well with the measured data, and further computational analysis shows that the Mo filaments' shielding from radiation, the thermal insulation plates, and the thermal conductivity of the radiation cavity all affect significantly either the mean temperature or the temperature distribution uniformity in the substrate.