STUDY OF THE INJURY OF THE Ar+ INJECTION Si LAYER BY THE USE OF XRD AND ELLIPSOMETER
STUDY OF THE INJURY OF THE Ar~ INJECTION Si LAYER BY THE USE OF XRD AND ELLIPSOMETER

The Ar injection layer into silicon can be described as inhomogeneous absorption medium wafer. The distribution of the stress, strain, strain energy in the injury layer has been studied utilizing XRD. And the average ellipsometer is used here to investigate the optical constant and degree of injury of the ion injection injury wafer.