A Flash Memory Static Wear-leveling Strategy
一种FLASH存储器静态负载平衡策略

Flash Memory is a kind of common storage device. Its characteristics of flexibility, low power, and so on offer excellent qualifications for embedded system and mobile system. But Flash Memory must be wrote after erasure operation, which brings forward challenge for storage system designer. The most important thing is that the erasure operation times are very limitable. The data structure and physical characteristics were analysed. And a static wear-leveling strategy based on classifying data with trigger condition was brought forward. An experiment was carried out to simulate this strategy using VHDL. As a result, this strategy improves the wear-leveling rate.