AUGER-ION SPUTTERING ANALYSIS OF BINARY ALLOYS
二元合金离子剥离Auger谱逐层分析

The element distribution of the homogeneous binary samples withmechanicaly scraped surfaces have been studied by means of Auger-Ion sputteringtechnique. The resulted profiling curves, generally show that the steady state con-centration usualy deviates more or less from the bulk concentration and that anobservable "spike" appears in the near surface layer. The amplitude of the divia-tion or the "spike" depends on the system and sputtering condition. Therefore, theAuger-Ion sputtering profiling curve could not reflect the original element distribu-tion exactly due to the interaction between energetic ions and atoms on the samplesurface. Some effects leading to the "distortion" and some aspects which must betaken in to account in using the profiling curve have been discussed briefly.