VARIATION OF Sb CONCENTRATION IN MELT DURING GROWTH OF HEAVILY Sb-DOPED Si SINGLE CRYSTAL

A mathematical model has been established for the character of the variation of Sb concentration in the melt during the growth process of heavily Sb-doped Si single crystal. The calculated curve drawn with the model is in good agreement with the experimental one. As a result of the segregation of the solute during pulling, the concentration of Sb in the melt increases. It is found from the calculated curves that the increase of Sb concentration can be brought under control while the pulling process was carried out under a reduced pressure. Thus, the formation of cellular interface could be postponed. As the pressure in a furnace decreases to 2.7 kPa, the Sb concentration will be kept almost unchanged.