APPLICATION OF ETCH-FIGURE METHOD FOR THE EXAMINATION OF SILICON-IRON

Certain improvements of the etch-figure method, suitable for such fine-grain-ed specimens as the matrix of primary recrystallization or the non-oriented siliconiron, are described. The determination of the geometrical parameters of the etch-figures by conventional metallographic microscope is also given. The usefulness ofthe etch-figure method is supported by many practical examples, e. g. determining themisorientation between the neighbouring grains, measuring the orientation and thetextures, analysing the fractures, examining the orientation effect of domain struc-tures, ascertaining the deformation extent of deformed grains as well as indicatingthe orientation relationships between the precipitants and its matrix, etc. Scanningelectron microscope is very helpful for detailed observation and exact measure-ments of the etch pits, because of its long depth of view.