An InGaAs/InP W-band dynamic frequency divider
W波段InGaAs/InP动态二分频器

An ultra-high-speed 2∶1 dynamic frequency divider based on clocked-inverter was designed and fabricated using our own fT =214 GHz, fmax=193 GHz InGaAs/InP heterojunction bipolar transistor technology. The frequency divider was designed to operate from 60 GHz to 100 GHz. However, it was only demonstrated from 62 GHz to 83 GHz, due to the limitation of the measurement system. The circuit consumed 1060.8 mW with a supply voltage of -5.2 V and 596.4 mW with a reduced supply voltage of -4.2 V. The successful fabrication of the divider was of great importance on building a phase-locked loop operating at W band.