Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal
[110]晶向近本征硅单晶双光子吸收各向异性

The anisotropy of photocurrent induced by two-photon absorption in 110]-cut nearly-intrinsic crystal silicon sample is investigated. The anisotropy coefficient of third-order nonlinear susceptibility of Si for the wavelength of 1.3 is measured to be -0.25, and the ratio of to is 2.4. The independent element is consequently obtained to be about based on the former observed result of .