Fabrication and characterization of Cu(In,Ga)Se2 thin films
Cu(In,Ga)Se2薄膜的制备及其表征

CuIn1-xGaxSe2 (CIGS) is a promising direct band-gap semiconductor material for developing a new generation of high-efficiency and low-cost thin film solar cells due to its variable band-gap structure and high absorption coefficient in visible range. In this paper, a series of CIGS thin films were fabricated by combination of DC sputtering and selenizing processes. The effect of the sputtering power for deposition of CuIn1-xGax (CIG) metal precursors on the microstructures and optical properties of the CIGS films were investigated. It was found that the film, deposited at 50W sputtering power and selenized at 550 oC for 40 minutes, exhibited a single chalcopyrite phase, uniform and dense morphology, and columnar grains. It is also found that the optical band gaps of the films are in the range of 1.21-1.24eV.