Effect of annealing on optical properties of ZnO thin films
退火对用PLD法制备ZnO薄膜的发光影响

Zinc oxide thin films fabricated on si (111) and sapphire substrates by pulsed laser deposition (PLD) were annealed at different temperature and in different ambient, respectively. The effect of annealing temperature and annealing ambient on structural and optical properties of ZnO thin films has been characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectra. The experimental results show that with the increase of annealing temperature the press stress of ZnO thin films is decreased and shifted towards strain stress. PL spectra of ZnO thin films annealed at different temperature indicate that the UV emission is increasing with increasing annealing temperature, and the visible emission is decreasing. The results annealed on sapphire in oxygen ambient shows that the thin film possesses small strain stress, and the UV emission is the highest.