IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO_2 FILMS PREPARED BY SOL-GEL METHOD
隧道穿透对Sol-gel多晶二氧化钒薄膜电阻率的影响模拟

Based on the model of the two phases of grain and grain boundary, the grain boundary tunneling of carriers was considered to simulate the change of the resistivtiy of VO2 polycrystalline film prepared by Sol-gel method in temperature range of 10℃～100℃.The simulation results were in good agreement with the experiment data. The results indicate that the grain boundary effect decreases the magnitude of resistivity change of VO2 film durying semiconductor-to-metal phase transition, and meanwhile the VO 2 film in metal phase has a negative temperature coefficient of resistivity.