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DEDUCING THE PROPERTIES OF CdZnTe WAFERS BY IR TRANSMISSION
根据红外透过率推断CdZnTe晶片的性能

Keywords: IR transmission,absorption mechanism,dislocation density,resistivity,CdZnTe
红外透过率
,傅里叶变换红外光谱仪,碲锌镉晶体,位错密度,半导体材料,吸收率,晶体结构

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Abstract:

Several Cd 0.9 Zn 0.1 Te wafers with different properties are characterized by FTIR transmission. It is found that the IR transmission can be used qualitatively to deduce the quality of the Cd 0.9 Zn 0.1 Te wafers. The wafers with higher transmission have homogenized concentration distribution, lower dislocation density, and higher resistivity. According to the variation of IR transmission with wavenumber, IR transmission spectra can be classified into four types with different qualities. These results are initially analyzed based on the mechanism of Cd 0.9 Zn 0.1 Te IR absorption.

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