THE ELECTRICAL PARAMETER ANALYSIS FOR Hg1-xCdxTe PHOTOCONDUCTORS
Hg1-xCdxTe光导探测器的电学参量分析

The temperature and magnetic field dependent resi stivity was measured for Hg1-xCdxTe photoconductive detectors. The densi ty of all kinds of surface electrons was found to keep constant from 1.2K to 55K by the Shubnikov-de Haas (SdH) measurements. A three-band model, which consis ts of two kinds of surface electrons and bulk electrons, was proposed to fit the t emperature dependent resistivity. The electrical parameters obtained by this mod el agree well with the experimental data and the results given by SdH measuremen ts.