HOLE CAPTURE BARRIER OF SELF-ORGANIZED InAs QUANTUM DOTS
InAs自组织生长量子点的空穴俘获势垒

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self organized InAs quantum dots The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time The energy of ground state of 2 5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0 09eV, and there was a barrier associated to the change of charge state of quantum dots The capture barrier energy of such dots for hole was about 0 26eV The work is very meaningful for further understanding the intrinsic properties of quantum dots