STUDY ON THE INTERMIXING OF GaAs/AlGaAs ASYMMETRICAL CO UPLING DOUBLE QUANTUM WELL WITH PHOTOLUMINESCENCE SPECTRA
GaAs／AlGaAs非对称耦合双量子阱界面混合效应荧光谱研究

GaAs/AlGaAs asymmetrical coupling double quantum wells (ACDQW) were grown with MBE with the combinative implantation method, and several areas of coupling quantum well with different implantation ion of As + and H + and different ion doses in single wafer were obtained. Without rapid thermal annealing procedure, maximum difference of transition energy of intersubbands of 100meV was found from the photoluminescence spectra measured at room temperature. During the implantation process, the energy shift caused by combinative implanation was found to be larger than that caused by ion implantation individually.