THE TRANSPORT PROPERTIES OF THE LONG WAVE PHOTOCONDUCTIVE HgCdTe DETECTORS
长波光导HgCdTe探测器的输运特性

The temperature dependence of the resistivity for the long wave photoconductive HgCdTe linear array detectors was measured at the temperature from 1.2 to 300K.The experimental results show that there exists a significant difference in the temperature dependence of the resistivity between high and low performance detective elements.The temperature dependence of the resistivity of high performance detective elements is similar to that of the normal HgCdTe material,whereas the temperature dependence of the resistivity of low performance detective elements is similar to that of the degenerate HgCdTe material.There is a correlation between the detector performance and the temperature at which the detector has its maximal resistance.