THE SUBBAND STRUCTURE OF P-TYPE Hg_(0.76)Cd_(0.24)Te
P型Hg0.76Cd0.24Te的子能带结构

The MIS structure of p-type Hg0.76Cd0.24Te bulk material was prepared and its capacitance-voltage characteristic was measured by using a self-established differential capacitance spectrometer. On the basis of Chu's experimental model, the experimental data were fitted and the subband structure in the n-type inversion layer was obtained. The experimental result is in good agreement with that calculated from the revised self-consistent theory.