STUDY OF TRANSPORT BEHAVIOR OF ELECTRONS LOCALIZED IN SHALLOW IMPURITY LEVEL
局域在浅施主能级上的电子输运行为研究

Magnetotransport measurement is reported on five bulk n-Hg1-xCdxTe (x = 0.17 ~ 0.22) samples at low temperature from 0.3 K to 4.2K and high magnetic field up to 7T. With the decrease of temperature from 4.2 K, Hall resistance gradually deviates from its classical value and shows quantum behavior. The authors' experiments reveal that there is an incipient, nonquantized "Hall plateau", which coincides with the minima of the SdH oscillations near 0.4 T. This phenomenon is quite similar to the quantum Hall effect in two-dimensional systems. The 90?phase difference between Hall oscillation and SdH oscillation was observed, and the anomalous temperature effect of SdH oscillation was also discovered. Using the model of localization, the experimental data can be explained quite well.