MOLECULAR BEAM EPITAXY GROWTH AND CAPACITANCE-VOLTAGE MEASUREMENT OF HgTe/CdTe SUPERLATTICE
HgTe／CdTe超晶格的分子束外延生长和电容－电压谱研究

Metal-insulator-semiconductor (MIS) strueture were fabricated with p-type HgTe/CdTe superlattice. The MBE growth, device fabrication and measurement results are described. The results show that the wide CdTe barrier impedes the movements of minorities (electrons) to the interface and the low frequency capacity can't reach the insulator capacity at 77K in the strong inversion region, which is very similar to high frequency C-V curves of ordinary MIS structures.