High-Power Property of Resonant-Cavity-Enhanced Photodetectors Grown on GaAs
量子阱共振腔增强型光电探测器的高功率特性

High-power property of quantum well resonant-cavity-enhanced photodetector(QW-RCE-PD) was investigated by measuring the photocurrent as function of reverse bias and optical power in 1.55 μm QW-RCE-PD and simulating energy band structure and electric field.The mechanism of photocurrent was analyzed.It is found that high recombination is the main cause of the saturation of photocurrent in devices which have high barrier in quantum well region.And it is proved that the barrier height of quantum well is the most important factor to affect high power property by measuring the photoelectric response of 1.064μm QW-RCE-PD and simulating photoelectric response of devices with different barrier height in quantum well.