Photoluminescence of Hexagonal AlN Nanowires with Native Defect and Oxygen Impurity
六方氮化铝纳米线本征缺陷和氧杂质的光致发光谱研究

The hexagonal AlN nanowires are synthesized through the direct reaction of AlCl3 with NaN3. The photoluminescence spectra at different temperatures show that the product has two relatively narrow emission peaks with a full width at half maximum of about 5 nm centered at 413 nm and 422 nm respectively, as well as an emissive band in the near ultraviolet area. As the temperature rises, the emission band has an obviously red shift, which is proportional to temperature. Theoretical and experimental analyses show that the emission peak at 413 nm does not relate to the native elements of AlN, and the peak at 422 nm is caused by Al related native defects.