Study of Preferred Orientation Growth of SBN Thin Films with MgO Bufferlayer on the Silicon Substrate and Search of Waveguide Structure
以MgO为缓冲层的硅基铌酸锶钡薄膜取向特性与其波导结构的设计研究

Highly preferred orientation ferroelectric SBN thin films have been grown on MgO-buffered Si(100) substrate with the Sol-Gel method. The results show that the preferred orientation of SBN film can be considerably improved by adding the MgO buffer layer. Based on the theory of ideal five layers symmetrical waveguide-coupling film, this paper analyses the relationship of the optical loss and the thickness of the waveguide layer and the MgO-buffered layer. After investigating the connection between artwork and loss during SBN growth, single-crystal SBN ferroelectric thin film can be developed on Si(001) substrate with outstanding orientation. Therefore we can employ SBN having large E-O coefficient as electro-optical waveguide and make good use of it in micro system