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光子学报  1996 

THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER
InxGa1—xAs缓冲层上InyGa1—yAs/(A1)GaAs超晶格的光伏谱研究

Keywords: Photovoltaic measurement,MOCVD,InGaAs/GaAs strained quantum well
光伏测量
,IngGaAs,应变量子阱

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Abstract:

It is found that there are two intrinsic electric field regions in samples of InyGa1-yAs/GaAssuperlattices on InxGa1-xAs buffer layer.The electric field in these two regions, with one locating atthe surface and another locating at the interface between the InyGa1-yAs/GaAs superlattices and the InxGa1-x As buffer layer,has contrary direction each other. Based on this model,we can give a goodexplanation to the photovoltaic spectra of these samples.

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